ret y rt - low power loss, high efficiency - ideal for automated placement - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 20 30 40 50 60 100 v v rms 14 21 28 35 42 70 v v dc 20 30 40 50 60 100 v i f(av) a dv/dt v/ s r ja o c/w t j o c t stg o c document number: ds_d1309051 version: g13 10 -55 to +125 -55 to +150 operating junction temperature range storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle voltage rate of change (rated v r ) 10000 typical thermal resistance 20 maximum reverse current @ rated vr t j =25 t j =100 i r ma 15 0.5 a maximum instantaneous forward voltage (note 1) i f = 8 a v f 0.55 0.75 0.90 v maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 8 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 s k 8 1 0 c u nit maximum repetitive peak reverse voltage polarity: indicated by cathode band weight: 0.21 g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er sy m bol s k 8 2 c s k 8 3 c s k 8 4 c s k 8 5 c s k 8 6 c - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec m ech an i cal dat a case: do-214ab (smc) do-214ab (smc) sk82c thru sk810c surface mount schottk y barrier rectifier feat u res - moisture sensitivity level: level 1, per j-std-020 taiwan semiconductor downloaded from: http:///
part n o. part n o. sk86csk86c sk86c (ta=25 unless otherwise noted) document number: ds_d1309051 version: g13 prefix "h" suffix "g" m6 smc smc g descri pt i on sk86c r7 r7 aec-q101 qualified sk86c r7g r7 pack i n g code pack age pack i n g r7 rat i n gs an d ch aract eri st i cs cu rv es ex am ple sk86chr7 h r7 green com pou n d code 850 / 7" plastic reel r6 smc sk82c thru sk810c taiwan semiconductor orderi n g i n form at i on aec-q1 0 1 qu ali fi ed green com pou n d code sk8xxc (note 1) 3,000 / 13" paper reel 3,000 / 13" plastic reel note 1: "xx" defines voltage from 20v (sk82c) to 100v (sk810c) preferred p/n green compound aec-q1 0 1 qu ali fi ed pack i n g code 0 2 4 6 8 10 0 50 100 150 average forward a current (a) lead temperature ( o c) fig.1- maximum forward current derating curve resistiveor inductive load sk85c-sk810c sk82c-sk84c 60 120 180 240 300 360 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive peak forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics tj=25 tj=75 tj=125 sk82c-sk84c sk85c-sk810c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 instantaneous forward current (a) forward voltage (v) fig. 3- typical forward characteristics sk82c-sk84c sk85c-sk86c pulse width=300 s 1%duty cycle sk810c downloaded from: http:///
min max min max a 2.90 3.20 0.114 0.126 b 6.60 7.11 0.260 0.280 c 5.59 6.22 0.220 0.245 d 2.00 2.62 0.079 0.103 e 1.00 1.60 0.039 0.063 f 7.75 8.13 0.305 0.320 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = specific device code g = green compound yw = date code f = factory code document number: ds_d1309051 version: g13 m ark i n g di agram c6 . 8 d4 . 4 e9 . 4 su ggest ed pad lay ou t symbol unit (mm) a3 . 3 b2 . 5 unit (inch) 0.1300.098 0.268 0.173 0.370 sk82c thru sk810c taiwan semiconductor pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) 10 100 1000 0.1 1 10 100 junction capacitsuce (pf) reverse voltage (v) fig. 5- typical junction capacitance f=1.0mhz vsig=50mvp-p sk82c-sk84c sk85c-sk86c sk810c 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance a ( /w) pulse duration. (sec) fig. 6- typical transient thermal characteristics downloaded from: http:///
ret y rt assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1309051 version: g13 sk82c thru sk810c taiwan semiconductor n ot ic e specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, downloaded from: http:///
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